Si-Al-K Doped Molybdenum Wire
Si-Al-K doped molybdenum wire is a multi-element reinforced molybdenum alloy wire, produced by adding trace amounts of silicon (Si), aluminum (Al), and potassium (K) into high-purity molybdenum. Under high-temperature conditions, these elements form stable, dispersed oxide phases that significantly enhance the material’s high-temperature mechanical properties, recrystallization resistance, and electron emission performance. This material is primarily used for manufacturing high-performance filaments, cathodes for vacuum electronic components, and electron beam heating sources. It is regarded as a significant upgrade and replacement for conventional pure molybdenum wire.
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Material Features:
Significant Dispersion Strengthening
Si, Al, and K form ultra-fine oxide particles at elevated temperatures, which inhibit grain boundary migration and recrystallization, thereby enhancing high-temperature strength.
Excellent Creep Resistance
Maintains high structural stability even under long-term service conditions above 1500 °C.
High Electron Emission Efficiency
Low surface work function enables high thermionic emission current density, ideal for thermionic cathode applications.
Stable Fine-Grained Structure
Retains a fine and uniform grain structure even after high-temperature annealing.
Good Workability
Suitable for cold drawing into fine wire, enabling large-scale and continuous production.
Typical Applications:
Filament Materials
Used in halogen lamps, electron beam lamps, and tungsten-halogen infrared heaters.
Vacuum Electronic Devices
For cathode wires, electron gun components, and ion source emitters.
Aerospace Industry
High-temperature electrodes and thermal control elements.
Semiconductor Heating Systems
Heating filaments for applications such as molecular beam epitaxy (MBE).
If there is any inquiry of molybdenum, please feel free to contact us by email: sales@chinatungsten.com, sales@xiamentungsten.com or by telephone:86 592 512 9696/86 592 512 9595.